Progress in p‐type Tunnel Oxide‐Passivated Contact Solar Cells with Screen‐Printed Contacts
نویسندگان
چکیده
Herein, an update on the work high-efficiency p-type solar cells with p-type-passivating rear contacts formed by low-pressure chemical vapor deposition and screen-printed is given. It shown that thin polysilicon layers enable a high level of surface passivation but do show increased contact resistivity especially recombination. Commercially available pastes dependence recombination polylayer thickness firing set temperature are investigated. For 240 nm-thick poly-Si layers, values down to 4 mΩ cm2 60 fA cm−2 observed. presented process sequence, improved hydrogenation as one possibility increase quality passivating structure identified. Implementing all findings into final cell, maximum total area conversion efficiency 21.2% reported.
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ژورنال
عنوان ژورنال: Solar RRL
سال: 2021
ISSN: ['2367-198X']
DOI: https://doi.org/10.1002/solr.202100152